D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov
{"title":"Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs","authors":"D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov","doi":"10.1109/SIBEDM.2007.4292905","DOIUrl":null,"url":null,"abstract":"The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.
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