High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications

Abstract

This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.