{"title":"Atomistic calculation of electronic states in III-V nitride quantum dots","authors":"T. Saito, Y. Arakawa","doi":"10.1109/NUSOD.2003.1259025","DOIUrl":null,"url":null,"abstract":"Atomistic calculations of the electronic states in In/sub 0.2/Ga/sub 0.8/N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp/sup 3/ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Atomistic calculations of the electronic states in In/sub 0.2/Ga/sub 0.8/N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp/sup 3/ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.
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