A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process

J. Qayyum, J. Albrecht, A. Ulusoy
{"title":"A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process","authors":"J. Qayyum, J. Albrecht, A. Ulusoy","doi":"10.1109/SIRF.2019.8709097","DOIUrl":null,"url":null,"abstract":"This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\\mu {m}\\times 465-\\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\mu {m}\times 465-\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.
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采用0.13 μ SiGe BiCMOS工艺的-1.5 dBm OP1dB的紧凑型24-32 GHz线性上变频混频器
本工作演示了在SiGe工艺技术中实现的24-32 GHz上变频混频器。混频器采用双平衡吉尔伯特单元结构,片上变压器平衡用于LO输入和RF输出端口。本端功率为6 dBm时,混频器在26.5 GHz时的最大转换增益为13.7 dB, 3-dB带宽为24-32 GHz,本端频率为27 GHz时的双侧频带中频带宽为0.25-1.25 GHz,在28 GHz时的OP1dB为-1.5 dBm。它占用的面积为$468-\mu {m}乘以$ 465-\mu{m}$,从2.5 V电源消耗90 mW。其性能可与类似硅技术中任何最先进的混频器相媲美。
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