{"title":"A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process","authors":"J. Qayyum, J. Albrecht, A. Ulusoy","doi":"10.1109/SIRF.2019.8709097","DOIUrl":null,"url":null,"abstract":"This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\\mu {m}\\times 465-\\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\mu {m}\times 465-\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.