M. D. Vilisova, V. P. Germogenov, I. Ponomarev, A. Tyazhev
{"title":"Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers","authors":"M. D. Vilisova, V. P. Germogenov, I. Ponomarev, A. Tyazhev","doi":"10.1109/SIBCON.2011.6072646","DOIUrl":null,"url":null,"abstract":"The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.","PeriodicalId":169606,"journal":{"name":"2011 International Siberian Conference on Control and Communications (SIBCON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2011.6072646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.
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