P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, Kazuo Tsutsui, H. Iwai
{"title":"Er inserted Ni silicide metal source/drain for Schottky MOSFETs","authors":"P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, Kazuo Tsutsui, H. Iwai","doi":"10.1109/IWJT.2010.5474989","DOIUrl":null,"url":null,"abstract":"A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.
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