{"title":"Circuit influences on COMFET™ (IGT) dynamic latching current","authors":"H. R. Ronan, C. Wheatley","doi":"10.1109/PESC.1986.7415548","DOIUrl":null,"url":null,"abstract":"Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.","PeriodicalId":164857,"journal":{"name":"1986 17th Annual IEEE Power Electronics Specialists Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 17th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1986.7415548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.
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