High sensitivity 80 Gbps parallel optical receiver for hybrid integrated Ge photodiodes

A. Polzer, W. Gaberl, R. Swoboda, P. Brandl, J. Fédéli, C. Kopp, L. Vivien, H. Zimmermann
{"title":"High sensitivity 80 Gbps parallel optical receiver for hybrid integrated Ge photodiodes","authors":"A. Polzer, W. Gaberl, R. Swoboda, P. Brandl, J. Fédéli, C. Kopp, L. Vivien, H. Zimmermann","doi":"10.1109/GROUP4.2011.6053724","DOIUrl":null,"url":null,"abstract":"A high sensitivity 8×10 Gbps parallel integrated optical receiver with transimpedance amplifier followed by limiting amplifier stages and output driver in standard 0.35 µm SiGe BiCMOS technology with low input noise current (407 nA) is presented.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A high sensitivity 8×10 Gbps parallel integrated optical receiver with transimpedance amplifier followed by limiting amplifier stages and output driver in standard 0.35 µm SiGe BiCMOS technology with low input noise current (407 nA) is presented.
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用于混合集成锗光电二极管的高灵敏度80gbps并行光接收器
提出了一种高灵敏度8×10 Gbps并联集成光接收机,采用标准的0.35µm SiGe BiCMOS技术,具有低输入噪声电流(407 nA),带跨阻放大器、限幅放大级和输出驱动器。
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A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides Dual wavelength conversion using electrically pumped microdisc lasers Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As Energy scaling in silicon photonic data encoding 154µm Er doped light emitting devices: Role of silicon content
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