Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee
{"title":"Realization of high-Q inductors using wirebonding technology","authors":"Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee","doi":"10.1109/APASIC.1999.824149","DOIUrl":null,"url":null,"abstract":"Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APASIC.1999.824149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.
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