A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin
{"title":"A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor","authors":"A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin","doi":"10.1109/IEDM.1992.307312","DOIUrl":null,"url":null,"abstract":"We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<>
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