A 1.5V, 140µA CMOS ultra-low power common-gate LNA

Chang-Jin Jeong, W. Qu, Yang Sun, Dae-Young Yoon, Sok-Kyun Han, S. Lee
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引用次数: 12

Abstract

This paper presents design guidelines for ultra-low power Low Noise Amplifier (LNA) design by comparing input matching, gain, and noise figure (NF) characteristics of common-source (CS) and common-gate (CG) topologies. A current-reused ultra-low power 2.2 GHz CG LNA is proposed and implemented based on 0.18 um CMOS technology. Measurement results show 13.9 dB power gain, 5.14 dB NF, and −9.3 dBm IIP3, respectively, while dissipating 140 uA from a 1.5 V supply, which shows best figure of merit (FOM) among all published ultra-low power LNAs.
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1.5V, 140µA CMOS超低功耗共门LNA
本文通过比较共源(CS)和共门(CG)拓扑的输入匹配、增益和噪声系数(NF)特性,提出了超低功耗低噪声放大器(LNA)设计的指导原则。提出并实现了一种基于0.18 um CMOS技术的电流复用超低功耗2.2 GHz CG LNA。测量结果显示,功率增益分别为13.9 dB, NF为5.14 dB, IIP3为- 9.3 dBm,而1.5 V电源的功耗为140 uA,在所有已发布的超低功耗LNAs中显示出最佳的性能因数(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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