{"title":"Nonlinear modelling of power FETs and HBTs","authors":"C. M. Snowden","doi":"10.1109/INMMC.1994.512510","DOIUrl":null,"url":null,"abstract":"Large-signal modelling and simulation techniques for microwave and millimeter-wave transistors are described. The relative merits of physical, physics-based and non-linear equivalent circuit models are summarized.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INMMC.1994.512510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Large-signal modelling and simulation techniques for microwave and millimeter-wave transistors are described. The relative merits of physical, physics-based and non-linear equivalent circuit models are summarized.
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