Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512524
T. Martín-Guerrero, C. Camacho-Peñalosa
A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones.
{"title":"Nonlinearities in a MESFET-distributed model","authors":"T. Martín-Guerrero, C. Camacho-Peñalosa","doi":"10.1109/INMMC.1994.512524","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512524","url":null,"abstract":"A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129153807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512523
D. Schreurs, S. Herrebout, B. Nauwelaers, W. De Raedt, Y. Baeyens, M. Van Rossum, M. Coady
A HEMT diode model intended for analog applications should be valid over the whole gate-source voltage (T/sub gs/) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-FET measurements) and the intrinsic elements (hot-FET measurements). This implies that approximations used in the cold-FET extraction approach have to be reviewed. This is a particular problem for the determination of the resistances.
{"title":"Large-signal extraction method for GaAs and InP HEMT diodes","authors":"D. Schreurs, S. Herrebout, B. Nauwelaers, W. De Raedt, Y. Baeyens, M. Van Rossum, M. Coady","doi":"10.1109/INMMC.1994.512523","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512523","url":null,"abstract":"A HEMT diode model intended for analog applications should be valid over the whole gate-source voltage (T/sub gs/) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-FET measurements) and the intrinsic elements (hot-FET measurements). This implies that approximations used in the cold-FET extraction approach have to be reviewed. This is a particular problem for the determination of the resistances.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124001863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512510
C. M. Snowden
Large-signal modelling and simulation techniques for microwave and millimeter-wave transistors are described. The relative merits of physical, physics-based and non-linear equivalent circuit models are summarized.
{"title":"Nonlinear modelling of power FETs and HBTs","authors":"C. M. Snowden","doi":"10.1109/INMMC.1994.512510","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512510","url":null,"abstract":"Large-signal modelling and simulation techniques for microwave and millimeter-wave transistors are described. The relative merits of physical, physics-based and non-linear equivalent circuit models are summarized.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122264986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512521
A. Hulsmann, W. Bronner, K. Kohler, M. Baeumler, J. Braunstein, P. Tasker
Understanding the breakdown mechanisms in FETs is a key factor in designing high power MMICs. The breakdown can be improved by reducing the electric field at the drain, and the gate leakage current. For MESFETs the drain field can be reduced by increasing the distances between the drain and gate contact. This leads to asymmetric source-gate and gate-drain spacings. For MODFETs with recessed gates, asymmetric designs are not successful in increasing the breakdown voltage because there is a low potential drop in the highly doped cap. Therefore wide etched gate recesses are required, but because of the symmetric etch processes, the source resistance is enhanced leading to a degradation in extrinsic transconductance. An other possibility for improving MODFET breakdown behaviour, is the use of surface depleted caps. However these MODFETs result in source current saturation in the 2DEG leading to an increase of the source and drain resistances at high currents.
{"title":"The problem of breakdown in MODFETs","authors":"A. Hulsmann, W. Bronner, K. Kohler, M. Baeumler, J. Braunstein, P. Tasker","doi":"10.1109/INMMC.1994.512521","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512521","url":null,"abstract":"Understanding the breakdown mechanisms in FETs is a key factor in designing high power MMICs. The breakdown can be improved by reducing the electric field at the drain, and the gate leakage current. For MESFETs the drain field can be reduced by increasing the distances between the drain and gate contact. This leads to asymmetric source-gate and gate-drain spacings. For MODFETs with recessed gates, asymmetric designs are not successful in increasing the breakdown voltage because there is a low potential drop in the highly doped cap. Therefore wide etched gate recesses are required, but because of the symmetric etch processes, the source resistance is enhanced leading to a degradation in extrinsic transconductance. An other possibility for improving MODFET breakdown behaviour, is the use of surface depleted caps. However these MODFETs result in source current saturation in the 2DEG leading to an increase of the source and drain resistances at high currents.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512532
M. Sobhy, E. A. Hosny, M. H. El-azeem, P. Russer, B. Isle
In this paper, a procedure for the analysis of general electromagnetic structures, which include distributed regions and lumped sub-circuits, is described. The distributed regions are modelled by the Transmission Line Matrix method (TLM) while the lumped subcircuits are described by the State Space method (SS). The combination of TLM and SS methods yields a powerful approach that combines the versatility of SS and TLM. Neither approach on its own can solve such structures. The analysis is completely performed in the time-domain and there are no restrictions on the input functions or topologies.
{"title":"Interfacing electromagnetic structures and lumped nonlinear circuits","authors":"M. Sobhy, E. A. Hosny, M. H. El-azeem, P. Russer, B. Isle","doi":"10.1109/INMMC.1994.512532","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512532","url":null,"abstract":"In this paper, a procedure for the analysis of general electromagnetic structures, which include distributed regions and lumped sub-circuits, is described. The distributed regions are modelled by the Transmission Line Matrix method (TLM) while the lumped subcircuits are described by the State Space method (SS). The combination of TLM and SS methods yields a powerful approach that combines the versatility of SS and TLM. Neither approach on its own can solve such structures. The analysis is completely performed in the time-domain and there are no restrictions on the input functions or topologies.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116980314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512518
C. Diskus, C. Bergamaschi, M. Schefer, W. Patrick, B. Klepser, W. Baechtold
In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.
{"title":"Approach for developing a large signal model of a 150 GHz HEMT","authors":"C. Diskus, C. Bergamaschi, M. Schefer, W. Patrick, B. Klepser, W. Baechtold","doi":"10.1109/INMMC.1994.512518","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512518","url":null,"abstract":"In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130701494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512534
G. Baumann, D. Hollmann, R. Heilig
A millimeter-wave GaAs HEMT MMIC oscillator at 29 GHz with a new linear and nonlinear HEMT model has been developed which is able to describe the single side source grounded configuration. The resonance frequency and output power has been predicted by the nonlinear simulation. The output power of the oscillator is greater than 6 dBm and with different dielectric resonators (DR's) the oscillator can lock to resonance frequencies from 26.5 to 29.5 GHz. The active device is a AlGaAs-GaAs HEMT with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/40 /spl mu/m.
{"title":"A 29 GHz DRO in coplanar waveguide configuration with an AlGaAs HEMT","authors":"G. Baumann, D. Hollmann, R. Heilig","doi":"10.1109/INMMC.1994.512534","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512534","url":null,"abstract":"A millimeter-wave GaAs HEMT MMIC oscillator at 29 GHz with a new linear and nonlinear HEMT model has been developed which is able to describe the single side source grounded configuration. The resonance frequency and output power has been predicted by the nonlinear simulation. The output power of the oscillator is greater than 6 dBm and with different dielectric resonators (DR's) the oscillator can lock to resonance frequencies from 26.5 to 29.5 GHz. The active device is a AlGaAs-GaAs HEMT with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/40 /spl mu/m.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124924094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512520
P. Baureis
A large signal equivalent circuit model for multi-emitter HBTs is proposed. The model is based on the description of a single-emitter-finger HBT which includes the intrinsic transistor temperature as a variable simulation parameter. This single-emitter device is described by a four node representation using the additional fourth node to calculate the transistor's pseudotemperature rise. The thermal coupling of the transistor elements is performed by thermal impedances. The model allows simulation of the thermally triggered collapse of the collector current at power densities greater than 10/sup 5/ W//sub cm/2. The use of emitter ballasting resistors improves the homogeneous temperature distribution of the power device and leads to an increase of the collector current of about 30%.
{"title":"Electrothermal modeling of multi-emitter heterojunction-bipolar-transistors (HBTs)","authors":"P. Baureis","doi":"10.1109/INMMC.1994.512520","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512520","url":null,"abstract":"A large signal equivalent circuit model for multi-emitter HBTs is proposed. The model is based on the description of a single-emitter-finger HBT which includes the intrinsic transistor temperature as a variable simulation parameter. This single-emitter device is described by a four node representation using the additional fourth node to calculate the transistor's pseudotemperature rise. The thermal coupling of the transistor elements is performed by thermal impedances. The model allows simulation of the thermally triggered collapse of the collector current at power densities greater than 10/sup 5/ W//sub cm/2. The use of emitter ballasting resistors improves the homogeneous temperature distribution of the power device and leads to an increase of the collector current of about 30%.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121496464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512522
M. Demmler, P. Tasker, M. Schlechtweg
An on-wafer measurement system has been developed for the complete characterization of the large signal behavior of transistors up to 40 GHz based on the microwave transition analyzer HP 71500A. The vector measurement capability of the MTA is utilized to allow full vector calibration of the measurement system for the fundamental and the higher harmonics. The error corrected waveforms at the transistor terminals are derived from the measurement data. Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements, i.e., RF current and voltage constraints associated with the output characteristic and the RF large signal transfer characteristic. These parameters, measured under real RF operating conditions, can be compared directly with DC or small signal S-parameter measurements. This is essential if large signal RF measurements are used for the optimization of high power transistor structures and in the development of accurate non-linear CAD models.
{"title":"On-wafer large signal power, S-parameter and waveform measurement system","authors":"M. Demmler, P. Tasker, M. Schlechtweg","doi":"10.1109/INMMC.1994.512522","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512522","url":null,"abstract":"An on-wafer measurement system has been developed for the complete characterization of the large signal behavior of transistors up to 40 GHz based on the microwave transition analyzer HP 71500A. The vector measurement capability of the MTA is utilized to allow full vector calibration of the measurement system for the fundamental and the higher harmonics. The error corrected waveforms at the transistor terminals are derived from the measurement data. Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements, i.e., RF current and voltage constraints associated with the output characteristic and the RF large signal transfer characteristic. These parameters, measured under real RF operating conditions, can be compared directly with DC or small signal S-parameter measurements. This is essential if large signal RF measurements are used for the optimization of high power transistor structures and in the development of accurate non-linear CAD models.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-05DOI: 10.1109/INMMC.1994.512513
K. Schopf, E. Pettenpaul
GaAs MMICs for frequency bands up to and above the X-band have been designed and manufactured in the planar DIOM process exhibiting not only performance data comparable to much higher cost processes but excellent uniformity and repeatability too. The application range for the supply voltage can vary from as low as 2.7 V to 12 V for receive and transmit circuits.
{"title":"GaAs amplifiers for radar and mobile communication systems","authors":"K. Schopf, E. Pettenpaul","doi":"10.1109/INMMC.1994.512513","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512513","url":null,"abstract":"GaAs MMICs for frequency bands up to and above the X-band have been designed and manufactured in the planar DIOM process exhibiting not only performance data comparable to much higher cost processes but excellent uniformity and repeatability too. The application range for the supply voltage can vary from as low as 2.7 V to 12 V for receive and transmit circuits.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121546562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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