Pressure contact IGBT, the ideal switch for high power applications

Abstract

Models and experimental data are used to predict the performance of large area pressure contact IGBTs, offering ratings equivalent to the largest power conventional technology devices. Differences in the electromechanical characteristics of pressure contact devices, when compared to substrate mounted devices are reviewed, and how these influence the potential performance of devices with higher power ratings is discussed. Employing high power pressure contact IGBTs in practical applications is considered and some possible advantages over alternative technology devices is indicated.