Wideband and High Gain Cascode Amplifier using Metamorphic HEMT for Millimeter-wave Applications

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282659

Sungchan Kim, D. An, Bok-Hyung Lee, Mun-Kyo Lee, D. Shin, J. Rhee

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Abstract

In this paper, millimeter-wave coplanar high gain and wideband cascode amplifiers based on metamorphic high electron mobility transistor (MHEMT) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 471 mA/mm and an extrinsic transconductance of 845 mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 193 GHz and 325 GHz, respectively. The matching circuit of cascode amplifier was designed for wideband characteristics using CPW (coplanar waveguide) transmission line. The one-stage amplifier showed a very wide 3 dB bandwidth of 37 GHz from 31.3 GHz to 68.3 GHz. The average S21 gain was 9.7 dB in band, with the maximum gain of 11.3 dB at 40 GHz. The two-stage amplifier had a 3 dB bandwidth of 29.5 GHz from 32.5 GHz to 62.0 GHz. The two-stage amplifier showed an excellent gain characteristic with average S21 gain of 20.4 dB in band and the maximum gain of 22.3 dB at 36.5 GHz. To our knowledge, these results have higher gain-per-stage with wider bandwidth than some other millimeter-wave amplifiers

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用于毫米波应用的变质HEMT宽带高增益级联放大器

设计并制作了基于高电子迁移率晶体管(MHEMT)的毫米波共面高增益宽带级联放大器。所制得的100 nm栅长MHEMT器件具有直流特性，漏极电流密度为471 mA/mm，外在跨导为845 mS/mm。电流增益截止频率(fT)为193 GHz，最大振荡频率(fmax)为325 GHz。针对级联放大器的宽带特性，采用共面波导传输线设计了匹配电路。单级放大器显示了31.3 GHz到68.3 GHz的37 GHz非常宽的3db带宽。S21的平均增益为9.7 dB，在40 GHz时最大增益为11.3 dB。两级放大器的3db带宽为29.5 GHz，从32.5 GHz到62.0 GHz。该两级放大器具有良好的增益特性，在频带内平均增益为20.4 dB，在36.5 GHz时最大增益为22.3 dB。据我们所知，这些结果比其他一些毫米波放大器具有更高的每级增益和更宽的带宽

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2006 European Microwave Integrated Circuits Conference

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