J. Ryan, J. Campbell, J. Zou, K. Cheung, R. Southwick, A. Oates, R. Huang
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引用次数: 2
Abstract
We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant shape factor methodology to suppress this component such that frequency-modulated charge pumping is well positioned for advanced device defect characterization.
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