Large-Signal Time Domain Characterization of Microwave Transistors under RF Pulsed Conditions

J. Teyssier, S. Augaudy, D. Barataud, J. Nebus, R. Quéré
{"title":"Large-Signal Time Domain Characterization of Microwave Transistors under RF Pulsed Conditions","authors":"J. Teyssier, S. Augaudy, D. Barataud, J. Nebus, R. Quéré","doi":"10.1109/ARFTG.2001.327460","DOIUrl":null,"url":null,"abstract":"This paper describes a time domain measurement technique of large-signal RF pulsed waveforms, based on Agilent Nonlinear Network Measurement System (NNMS). A transistor is biased under pulsed conditions and the RF is applied during bias pulses. The paper shows how the time domain RF measurements are acquired during the pulses. Up to 12 harmonic frequencies are taken into account, in order to provide an accurate time domain voltage and current description at both transistor terminals.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"57th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21

Abstract

This paper describes a time domain measurement technique of large-signal RF pulsed waveforms, based on Agilent Nonlinear Network Measurement System (NNMS). A transistor is biased under pulsed conditions and the RF is applied during bias pulses. The paper shows how the time domain RF measurements are acquired during the pulses. Up to 12 harmonic frequencies are taken into account, in order to provide an accurate time domain voltage and current description at both transistor terminals.
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射频脉冲条件下微波晶体管的大信号时域特性
介绍了一种基于安捷伦非线性网络测量系统(NNMS)的大信号射频脉冲波形时域测量技术。晶体管在脉冲条件下是偏置的,在偏置脉冲期间施加射频。本文介绍了如何在脉冲过程中获取时域射频测量值。考虑到多达12个谐波频率,以便在晶体管两端提供准确的时域电压和电流描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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A CPW T-Resonator Technique for Electrical Characterization of Microwave Substrates Separation of the Nonlinear Source Pull from the Nonlinear System Behaviour A Novel Measurement Standard for Nonlinear In-Band Distortion Characterization Large-Signal Time Domain Characterization of Microwave Transistors under RF Pulsed Conditions Comparison of Active and Passive Load-Pull Test Benches
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