One-bit non-volatile memory cell using memristor and transmission gates

Patrick W. C. Ho, H. Almurib, T. N. Kumar
{"title":"One-bit non-volatile memory cell using memristor and transmission gates","authors":"Patrick W. C. Ho, H. Almurib, T. N. Kumar","doi":"10.1109/ICED.2014.7015807","DOIUrl":null,"url":null,"abstract":"In recent researches, much emphasis has been placed in developing non-volatile memories as candidates for replacement of volatile memories. Apart from non-volatility, memristive devices also have high switching speed, low energy consumption, and small device size. In this article, a novel one-bit memory cell using two transmission gates and one memristor (2TG1M) is proposed. SPICE simulations were performed to compare energy requirements per one-bit memory cell between the proposed memory cell and the conventional volatile one-bit SRAM cell. Simulations show that the SRAM memory cell requires between 73.034 pJ and 12.433 nJ to retain logic information for 10 years, while the proposed memory cell requires less than 1 pJ to hold logic information for up to 10 years. The proposed memory cell is also simulated against the popular one transistor one memristor (1T1M) non-volatile memory cell to show faster switching speed by 1.5 times. This work concludes the advantages of the proposed 2TG1M nonvolatile memory cell against volatile memory in terms of energy requirements, and against non-volatile memory in terms of switching speed.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

In recent researches, much emphasis has been placed in developing non-volatile memories as candidates for replacement of volatile memories. Apart from non-volatility, memristive devices also have high switching speed, low energy consumption, and small device size. In this article, a novel one-bit memory cell using two transmission gates and one memristor (2TG1M) is proposed. SPICE simulations were performed to compare energy requirements per one-bit memory cell between the proposed memory cell and the conventional volatile one-bit SRAM cell. Simulations show that the SRAM memory cell requires between 73.034 pJ and 12.433 nJ to retain logic information for 10 years, while the proposed memory cell requires less than 1 pJ to hold logic information for up to 10 years. The proposed memory cell is also simulated against the popular one transistor one memristor (1T1M) non-volatile memory cell to show faster switching speed by 1.5 times. This work concludes the advantages of the proposed 2TG1M nonvolatile memory cell against volatile memory in terms of energy requirements, and against non-volatile memory in terms of switching speed.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
使用忆阻器和传输门的位非易失性存储器单元
近年来,非易失性记忆作为易失性记忆的替代物得到了广泛的关注。除了无易失性外,忆阻器件还具有开关速度快、能耗低、器件尺寸小等优点。本文提出了一种由两个传输门和一个忆阻器(2TG1M)组成的新型1位存储单元。SPICE模拟比较了所提出的存储单元和传统的易失性1位SRAM单元的每位存储单元的能量需求。仿真结果表明,SRAM存储单元需要73.034 ~ 12.433 nJ才能保留10年的逻辑信息,而所提出的存储单元需要不到1 pJ才能保留10年的逻辑信息。所提出的存储单元还与流行的一晶体管一忆阻器(1T1M)非易失性存储单元进行了仿真,显示开关速度提高了1.5倍。这项工作总结了所提出的2TG1M非易失性存储单元在能量需求方面相对于易失性存储器的优势,以及在开关速度方面相对于非易失性存储器的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A new trimming approach for shunt resistors used in metering applications Taxanomy and overview on cooperative MAC for vehicular ad hoc networks Electrical characterization of USB2 multiplexers/BC1.2 power switches/charging modules for accurate channel simulation Experimental studies of the correlation between fingers bending angle with voltage outputted from GloveMAP Comparison on TiO2 and TaO2 based bipolar resistive switching devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1