M. Yanagisawa, S. Nakajima, T. Sakurada, M. Kiyama, S. Sawada, R. Nakai
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引用次数: 0
Abstract
The Vertical Boat (VB) method has an advantage in the manufacture of large diameter GaAs substrates because of the low dislocation density and the small residual strain. The electrical characterization of devices fabricated on VB GaAs substrates have been demonstrated in this work. The VB substrate shows the same or better properties compared with the LEC substrate. We conclude that the VB GaAs substrate is expected to be suitable for the ion-implantation device process with a large diameter.
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