Surface Recombination Evaluation in Bipolar Junction Transistors by Combined Electro-Optical Method

Abstract

This paper describes an original method for very short minority carrier lifetime evaluation of semiconductor junctions that is aimed to be mainly used for the surface recombination studies of bipolar junction transistors made on silicon carbide, where an important surface recombination between base and emitter occurs. The presented method is based on combined electrooptical measurements and it was prior tested and calibrated using silicon bipolar transistors.