{"title":"C/sub /spl infin//-continuous small-geometry MOSFET modeling for analog applications","authors":"B. Iñíguez, E. G. Moreno","doi":"10.1109/MWSCAS.1995.504373","DOIUrl":null,"url":null,"abstract":"An explicit physically-based C/sub /spl infin//-continuous MOSFET modeling for all regions of operation is presented. The model accurately includes the small-geometry effects. As a consequence good agreement with measurements is observed and currents and their derivatives show smooth transitions between regions. Therefore the model is very suitable for analog applications, especially in the moderate inversion region.","PeriodicalId":165081,"journal":{"name":"38th Midwest Symposium on Circuits and Systems. Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"38th Midwest Symposium on Circuits and Systems. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.1995.504373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
An explicit physically-based C/sub /spl infin//-continuous MOSFET modeling for all regions of operation is presented. The model accurately includes the small-geometry effects. As a consequence good agreement with measurements is observed and currents and their derivatives show smooth transitions between regions. Therefore the model is very suitable for analog applications, especially in the moderate inversion region.
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