{"title":"The Preparation and Magnetic Properties of Strontium Ferrite Thin Film for High Density Recording","authors":"Dongping Wu, Zheng-yin Yang, F. Wei, M. Matsumoto","doi":"10.11485/ITETR.24.67.0_21","DOIUrl":null,"url":null,"abstract":"This paper reports on the preparation and magnetic properties of strontium ferrite thin films. All specimen films were deposited by a de magnetron sputtering apparatus. The substrate is thermally oxidized silicon wafer. The effects of substrate temperature (T(s)), oxygen partial pressure and target composition on structure and magnetic properties were investigated. It is found that for T(s) > 400 degreesC the films begin to crystallize and the increase of substrate temperature and oxygen partial pressure are beneficial to improve c-axis orientation normal to the film plane. The saturation magnetization M,increases with the increase of substrate temperature T,and decreases slightly with the increase of oxygen partial pressure. The film prepared by the target composition of SrO . 4Fe(2)O(3) at 600 degreesC has the highest values of M(s) and H(e) in perpendicular direction, they are 321 emu/cm(3) and 3.4 kOe, respectively.","PeriodicalId":212568,"journal":{"name":"IEICE technical report. Magnetic recording","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE technical report. Magnetic recording","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.11485/ITETR.24.67.0_21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports on the preparation and magnetic properties of strontium ferrite thin films. All specimen films were deposited by a de magnetron sputtering apparatus. The substrate is thermally oxidized silicon wafer. The effects of substrate temperature (T(s)), oxygen partial pressure and target composition on structure and magnetic properties were investigated. It is found that for T(s) > 400 degreesC the films begin to crystallize and the increase of substrate temperature and oxygen partial pressure are beneficial to improve c-axis orientation normal to the film plane. The saturation magnetization M,increases with the increase of substrate temperature T,and decreases slightly with the increase of oxygen partial pressure. The film prepared by the target composition of SrO . 4Fe(2)O(3) at 600 degreesC has the highest values of M(s) and H(e) in perpendicular direction, they are 321 emu/cm(3) and 3.4 kOe, respectively.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
