Practical realisation of a field-emission-based magnetic sensor

D. Garner, P. French
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引用次数: 1

Abstract

In this paper, the development of a functioning vacuum magnetic sensor (VMS), based upon the action of the Lorenz force on a field-emitted electron beam, is reported. The fabrication process is compatible with standard CMOS processes. It begins with the growth of a 2 /spl mu/m thick oxide on a silicon substrate followed by the deposition of a 300 nm thick polysilicon layer. LOCOS is used to pattern that polysilicon layer to form a field-emitting tip as the cathode, surrounding extraction gate electrodes, and a split anode placed at distances between 1 /spl mu/m and 500 /spl mu/m from the cathode and gate (over 100 device variations were fabricated using the same mask). It should be noted that the LOCOS step serves the dual purpose of defining the polysilicon electrodes and tip sharpening.
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场发射磁传感器的实际实现
本文报道了一种基于洛伦兹力作用于场发射电子束的功能真空磁传感器(VMS)。制造工艺与标准CMOS工艺兼容。首先在硅衬底上生长2 /spl mu/m厚的氧化物,然后沉积300 nm厚的多晶硅层。LOCOS用于对多晶硅层进行图案设计,形成作为阴极的场发射尖端,围绕提取栅电极,以及距离阴极和栅极1 /spl mu/m至500 /spl mu/m的分裂阳极(使用相同的掩膜制造了100多个器件变体)。应该指出,LOCOS步骤用于定义多晶硅电极和尖端锐化的双重目的。
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