Design of RCD snubbers based upon approximations to the switching characteristics. II. Simulation and experimental results

Z. Hossain, K. Olejniczak, K. Burgers, J. Balda
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Abstract

A theoretical analysis of the switching behavior of the MOS-controlled thyristor (MCT), with and without stray inductances present, under different snubbering conditions has been presented in a companion paper. In order to verify these theoretical results, a hard-switched experimental test circuit was constructed. In this paper, a comparison is made among the newly-derived analytical, PSpice simulation and experimental results.
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基于开关特性近似的RCD缓冲器设计。2仿真与实验结果
在另一篇论文中,对mos控制晶闸管(MCT)在有杂散电感和没有杂散电感的情况下,在不同缓冲条件下的开关行为进行了理论分析。为了验证这些理论结果,构建了硬开关实验测试电路。本文对新导出的解析、PSpice仿真和实验结果进行了比较。
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