High Efficiency One, Two, and Four Watt Class B FET Power Amplifiers

J. R. Lane, R. Freitag, J. Degenford, M. Cohn
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引用次数: 3

Abstract

A family of X-band amplifier utilizing the higher efficiency of class B operation has been designed and fabricated. This paper describes the circuitry and performance of 1 watt single-ended, 2 watt push-pull, and 4 watt dual push-pull amplifiers having typical power-added efficiencies of 45%, 40%, and 35%, respectively, in a 1 GHz bandwidth, with associated gains of 5.8 dB, 5.4 dB, and 5.0 dB . Additional data is given for fifteen each of the 1 watt and 2 watt units to show the consistency of their performance.
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高效率的一、二、四瓦B类场效应晶体管功率放大器
设计并制作了一种具有更高B类运算效率的x波段放大器。本文描述了1瓦单端、2瓦推挽和4瓦双推挽放大器的电路和性能,在1 GHz带宽下,典型的功率增加效率分别为45%、40%和35%,相关增益为5.8 dB、5.4 dB和5.0 dB。另外还提供了15个1瓦和2瓦单位的数据,以显示其性能的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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