High Frequency Operation of SuperJunction MOSFET enhanced with Kelvin Source Pin

M. Cacciato, S. Rizzo, G. Scarcella, G. Scelba, M. Rizzo, Domenico Nardo, R. Scollo, Alfio Scuto, G. Sorrentino
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引用次数: 2

Abstract

In this work a comparison between 3-pin and 4-pin superjunction (SJ) MOSFET is performed. Firstly, the advantages of the 4-pin packaging solution are pointed out by means of analytical expressions and simulations. Then, a standard 3-pin MOSFET has been experimentally compared with the Kelvin package configuration counterpart both integrated in an on board battery charger. The experimental results allowed quantifying the performance improvement of the four terminal package in terms of reduced switching energy losses and working temperature. These features enable the device to operate at higher switching frequency.
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开尔文源引脚增强的超结MOSFET高频工作
在这项工作中,比较了3引脚和4引脚超结(SJ) MOSFET。首先,通过解析表达式和仿真,指出了4针封装方案的优点。然后,将标准的3脚MOSFET与集成在车载电池充电器中的开尔文封装配置进行了实验比较。实验结果可以量化四端封装在降低开关能量损耗和工作温度方面的性能改进。这些特性使器件能够在更高的开关频率下工作。
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