A. Samelis, E. Whittaker, Michael Ball, A. Bruce, J. Nisbet, L. Lam, C. Christmas, W. Vaillancourt
{"title":"A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications","authors":"A. Samelis, E. Whittaker, Michael Ball, A. Bruce, J. Nisbet, L. Lam, C. Christmas, W. Vaillancourt","doi":"10.1109/RFIC.2016.7508314","DOIUrl":null,"url":null,"abstract":"A fully integrated flip-chip SiGe BiCMOS power amplifier for wireless local area network (WLAN) applications in the 2 GHz band is presented. In a front-end module (FEM) configuration and under 802.11ac signal excitation, the PA delivers 29 dB small-signal gain and -30.4 dB dynamic error vector magnitude (EVM) at 20.6 dBm, at nominal operating conditions (3.3 V, 25 °C). The PA tightly controls detector voltage and corrects the dynamic EVM over supply voltage, temperature, orthogonal frequency division multiplexing (OFDM) burst length and duty cycle variations.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A fully integrated flip-chip SiGe BiCMOS power amplifier for wireless local area network (WLAN) applications in the 2 GHz band is presented. In a front-end module (FEM) configuration and under 802.11ac signal excitation, the PA delivers 29 dB small-signal gain and -30.4 dB dynamic error vector magnitude (EVM) at 20.6 dBm, at nominal operating conditions (3.3 V, 25 °C). The PA tightly controls detector voltage and corrects the dynamic EVM over supply voltage, temperature, orthogonal frequency division multiplexing (OFDM) burst length and duty cycle variations.