Measurement of diffusion coefficients of interstitial impurities in Zr – 1 wt. % Nb alloy by internal friction method

V. Anan’in, B. Kalin
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Abstract

In alloys with a GPU lattice, it is possible to observe a relaxation of the Snukovsky type if there is a certain amount of substitution impurities in it. However, it is impossible to calculate the diffusion coefficients of the introduction impurities by the measured relaxation time by analogy with BCC alloys, just because of the possible interaction with substitution atoms. However, in some cases, if reliable diffusion data are available for an alloy close in composition to the studied one, the relaxation time can be calculated from the ratio τr = τr0·exp(Hm/RTm), where Hm, Tm are the parameters of the relaxation maximum of the impurity from the experiment, and τr0 can be calculated from the formula D0 = c02/(16·τr0) for the GPU lattice, taking D0 from the corresponding diffusion expert data. In this way, the diffusion coefficients of the introduction impurities in the alloy Zr – 1 wt. % Nb are calculated for several states of samples.
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内摩擦法测定Zr - 1wt . % Nb合金中间隙杂质扩散系数
在具有GPU晶格的合金中,如果其中有一定量的取代杂质,则有可能观察到Snukovsky型弛豫。然而,由于引入杂质可能与取代原子相互作用,不可能像BCC合金那样通过测量弛豫时间来计算引入杂质的扩散系数。然而,在某些情况下,如果有可靠的扩散数据,合金的成分与所研究的合金接近,则弛豫时间可以由比值τr = τr0·exp(Hm/RTm)计算,其中Hm, Tm是实验中杂质的弛豫最大值的参数,τr0可以由公式D0 = co2 /(16·τr0)计算GPU晶格,从相应的扩散专家数据中取D0。用这种方法计算了Zr - 1wt . % Nb合金中引入杂质在不同状态下的扩散系数。
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