High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBS

Abstract

A new high voltage Junction Barrier controlled Schottky (JBS) diode has been fabricated using 4H-SiC. This diode has some field reduction regions in the active area of a Schottky barrier diode (SBD). These regions can reduce the electric field at the Schottky barrier in the reverse blocking state, and can reduce the leakage current. By adopting the proper SBD metal, fine patterning and optimized structures, we succeeded in improving the trade-off between the blocking voltage (BV) and the specific on-resistance, and achieved a new record high BV of 3.7-3.9 kV and top-level specific on-resistance of 31.4-40.2 m/spl Omega/cm/sup 2/ for the first time. The newly developed JBS has a very fast recovery time t/sub /spl tau//spl tau// of 9.7 ns, which is about 10% that of the Si high-speed diode t/sub /spl tau//spl tau// and high voltage 4H-SiC pn diode. Furthermore, the dynamic characteristics of the developed JBS are almost constant at high temperatures up to 550 K.