{"title":"Strained-Silicon as New High-Speed Technology","authors":"A. Shapin, S. Kalinin","doi":"10.1109/SIBEDM.2006.231994","DOIUrl":null,"url":null,"abstract":"In the report we consider the basic prospects of development of strained-silicon technology in a communication facility, designs and principle of action MOSFET and the better hetero bipolar transistor (HBT) for wireless integrated circuit (IC), which working on frequencies of exceeding 350 GHz, analyze and compare performance data of HBT with GaAs and SiGe","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.231994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In the report we consider the basic prospects of development of strained-silicon technology in a communication facility, designs and principle of action MOSFET and the better hetero bipolar transistor (HBT) for wireless integrated circuit (IC), which working on frequencies of exceeding 350 GHz, analyze and compare performance data of HBT with GaAs and SiGe
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