Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts
{"title":"Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts","authors":"A. D. Hatmanto, K. Kita","doi":"10.7567/ssdm.2019.k-6-05","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"217 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2019.k-6-05","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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