首页 > 最新文献

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

英文 中文
Quantum annealing with spin lock technique 自旋锁技术的量子退火
H. Hakoshima, Y. Matsuzaki, Yuya Seki, S. Kawabata
{"title":"Quantum annealing with spin lock technique","authors":"H. Hakoshima, Y. Matsuzaki, Yuya Seki, S. Kawabata","doi":"10.7567/ssdm.2019.e-1-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-1-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"68 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120887096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thickness dependent crystal and electrical properties of polycrystalline Ge on a plastic substrate formed by solid-phase crystallization 固相结晶形成的塑料衬底上多晶锗的厚度依赖性晶体和电学性质
T. Imajo, T. Suemasu, K. Toko
{"title":"Thickness dependent crystal and electrical properties of polycrystalline Ge on a plastic substrate formed by solid-phase crystallization","authors":"T. Imajo, T. Suemasu, K. Toko","doi":"10.7567/ssdm.2019.f-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124398787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN 氮化镓中mg附着位错产生漏电流的微观原因
T. Nakano, K. Chokawa, Y. Harashima, M. Araidai, K. Shiraishi, A. Oshiyama, A. Kusaba, Y. Kangawa, A. Tanaka, Y. Honda, H. Amano
{"title":"Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN","authors":"T. Nakano, K. Chokawa, Y. Harashima, M. Araidai, K. Shiraishi, A. Oshiyama, A. Kusaba, Y. Kangawa, A. Tanaka, Y. Honda, H. Amano","doi":"10.7567/ssdm.2019.k-7-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128242293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 42-mV Startup Ring Oscillator Using Self-Bias Inverters for Extremely Low Voltage Energy Harvesting 一种42 mv启动环振荡器,使用自偏置逆变器进行极低电压能量收集
R. Matsuzuka, T. Terada, K. Matsumoto, M. Kitamura, T. Hirose
{"title":"A 42-mV Startup Ring Oscillator Using Self-Bias Inverters for Extremely Low Voltage Energy Harvesting","authors":"R. Matsuzuka, T. Terada, K. Matsumoto, M. Kitamura, T. Hirose","doi":"10.7567/ssdm.2019.m-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123370494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure 铁电Hf1-xZrxO2栅极结构二维MoS2铁电存储器晶体管的电学特性
S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang
{"title":"Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure","authors":"S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang","doi":"10.7567/ssdm.2019.d-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125622334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices 四端记忆器件中外延TiO2-x薄膜电阻开关的氧空位分布控制
R. Miyake, Z. Nagata, T. Tohei, A. Sakai
{"title":"Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices","authors":"R. Miyake, Z. Nagata, T. Tohei, A. Sakai","doi":"10.7567/ssdm.2019.g-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115872232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct Formation of Metal Patterns for Flexible Electronic Devices 柔性电子器件金属图案的直接形成
W. Li, Q. Sun, L. Li, X. Liu, T. Minari
{"title":"Direct Formation of Metal Patterns for Flexible Electronic Devices","authors":"W. Li, Q. Sun, L. Li, X. Liu, T. Minari","doi":"10.7567/ssdm.2019.j-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127053095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly efficient spin-orbit torque switching in a single GaMnAs thin film with perpendicular magnetic anisotropy 具有垂直磁各向异性的单GaMnAs薄膜中高效的自旋轨道转矩开关
M. Jiang, H. Asahara, S. Sato, T. Kanaki, H. Yamasaki, S. Ohya, M. Tanaka
{"title":"Highly efficient spin-orbit torque switching in a single GaMnAs thin film with perpendicular magnetic anisotropy","authors":"M. Jiang, H. Asahara, S. Sato, T. Kanaki, H. Yamasaki, S. Ohya, M. Tanaka","doi":"10.7567/ssdm.2019.e-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115523628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoresponsivity Evaluation of a Multi-Channel Graphene Nanoribbon based Field Effect Transistor Structure 基于多通道石墨烯纳米带的场效应晶体管结构的光响应性评价
J. A. Goundar, K. Suzuki, H. Miura
{"title":"Photoresponsivity Evaluation of a Multi-Channel Graphene Nanoribbon based Field Effect Transistor Structure","authors":"J. A. Goundar, K. Suzuki, H. Miura","doi":"10.7567/ssdm.2019.b-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115085121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing the effect of Rapid Thermal Annealing on Mg-doped ZnO EIS Structure Membrane for Na+ and K+ Sensing 分析快速热处理对mg掺杂ZnO EIS结构膜对Na+和K+传感的影响
C.F. Lin, C. H. Kao, K.L. Chen, Y. Lin, C.Y. Lin
{"title":"Analyzing the effect of Rapid Thermal Annealing on Mg-doped ZnO EIS Structure Membrane for Na+ and K+ Sensing","authors":"C.F. Lin, C. H. Kao, K.L. Chen, Y. Lin, C.Y. Lin","doi":"10.7567/ssdm.2019.g-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128729823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1