Color change and highly refractory surfaces of polycrystalline silicon of arsenic atoms of high dose implanted at low acceleration voltage, as the interesting object of the Raman spectroscopy

Abstract

Polycrystalline silicon surface of arsenic atoms of ≃1015 cm−2 implanted at 40keV showed color change from gold to light–red under a fluorescent light and highly refractory obstacle against exposure etching of radical fluorine excited with microwave. The refractory surface mechanism may be related to the fastening of vibration of lattice Si atoms of polycrystalline silicon. This is an interesting object for analysis of the Raman spectroscopy.