Abhishek A. Sharma, M. Noman, M. Skowronski, J. Bain
{"title":"Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs","authors":"Abhishek A. Sharma, M. Noman, M. Skowronski, J. Bain","doi":"10.1109/IIRW.2013.6804180","DOIUrl":null,"url":null,"abstract":"Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems - TaOx and TiOx, and compare the similarities and the universality in its control parameters. After comparing the time, voltage and temperature dependent dynamics, we find that a 1/E (E being electric field) dependence causes the activation energy to reduce by more than an order of magnitude.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems - TaOx and TiOx, and compare the similarities and the universality in its control parameters. After comparing the time, voltage and temperature dependent dynamics, we find that a 1/E (E being electric field) dependence causes the activation energy to reduce by more than an order of magnitude.
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