M. Regis, O. Llopis, L. Escotte, R. Plana, A. Gruhle, T. Brazil, M. Chaubet, J. Graffeuil
{"title":"Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators","authors":"M. Regis, O. Llopis, L. Escotte, R. Plana, A. Gruhle, T. Brazil, M. Chaubet, J. Graffeuil","doi":"10.1109/MWSYM.1999.779430","DOIUrl":null,"url":null,"abstract":"We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model's validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).","PeriodicalId":339267,"journal":{"name":"1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1999.779430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model's validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).
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