Dark-currents characterisation in charge-coupled devices

P. Gargini, C. Morandi, P. E. Rambelli
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Abstract

By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents'. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.
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电荷耦合器件中的暗电流特性
通过在集成模式下操作ccd延迟线,即停止传输过程相对较长的集成时间,然后将电荷包转移到输出,有可能使明显的热生成过程称为“暗电流”。论文的第一部分详细描述了在体积和表面生成参数均匀的情况下,在积分时间内结构内部发生的生成过程。然后提出了一种基于这种操作模式的实验技术:它表明它可以很容易地分离暗电流的大块和表面成分。该技术还可以精确定位小的电活性缺陷,并提出了一些由x射线观测支持的实验结果。
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