{"title":"GaAs Power HBT: COOL Device With HOT Performance","authors":"F. Ali","doi":"10.1109/SARNOF.1995.636670","DOIUrl":null,"url":null,"abstract":"AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high efficiency HBT power MMIC amplifiers designed for narrowband and broadband applications are also be presented.","PeriodicalId":118150,"journal":{"name":"IEEE Princeton Section Sarnoff Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SARNOF.1995.636670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high efficiency HBT power MMIC amplifiers designed for narrowband and broadband applications are also be presented.
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