Surface roughness analysis on platinum deposited wafer after reactive ion ecthing using SF6+Argon/CF4+Argon gaseous

Abstract

This paper reports the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE). Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. A total of four controllable process variables, with 16 sets of experiments were studied using a systematically designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. All four factors gave negative effects. This suggest that the surface roughness decreses when ICP power, Bias power, and working pressure is high. In addition, the CF4+Ar gives higher values of surface roughness compared to SF6+Ar.