Pub Date : 2013-12-01DOI: 10.1109/RSM.2013.6706532
L. N. Ismail, S. Adnan, M. Sauqi, M. N. Asiah, Z. Habibah, S. H. Herman, M. Rusop
In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V measurement were carried out by applying the sweeping voltage form -8V to +6V. Meanwhile for I-V measurement the applied voltage is from -5V to +5V. From the C-V curve, it shows typical behavior of n-type MIS. As the frequency increased, the maximum capacitance, Cmax is reduced. Transition from accumulation to depletion region are faster at frequency 10MHz compare to 10 kHz is due to the reactions of mobile charge carriers at the interface dielectric-semiconductor layer. When we applied positive and negative voltage bias to the MIS there is shifting in flat band voltage, VFB. The shifting is towards negative direction (more negative voltage) that is due to the charge trapping in the dielectric-semiconductor interface. Similar characteristics were at I-V results which showing shifting to more negative voltage proven that electrons are temporarily trapped and de-trapped at the interface of dielectric-semiconductor layer.
{"title":"Capacitance-voltage hysteresis of MIS device with PMMA:TiO2 nanocomposite as gate dielectric","authors":"L. N. Ismail, S. Adnan, M. Sauqi, M. N. Asiah, Z. Habibah, S. H. Herman, M. Rusop","doi":"10.1109/RSM.2013.6706532","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706532","url":null,"abstract":"In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V measurement were carried out by applying the sweeping voltage form -8V to +6V. Meanwhile for I-V measurement the applied voltage is from -5V to +5V. From the C-V curve, it shows typical behavior of n-type MIS. As the frequency increased, the maximum capacitance, Cmax is reduced. Transition from accumulation to depletion region are faster at frequency 10MHz compare to 10 kHz is due to the reactions of mobile charge carriers at the interface dielectric-semiconductor layer. When we applied positive and negative voltage bias to the MIS there is shifting in flat band voltage, VFB. The shifting is towards negative direction (more negative voltage) that is due to the charge trapping in the dielectric-semiconductor interface. Similar characteristics were at I-V results which showing shifting to more negative voltage proven that electrons are temporarily trapped and de-trapped at the interface of dielectric-semiconductor layer.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131264998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706578
Guang-Ming Zhang, Yi Su, Hsin-Yi Hsin, Y. Tsai
This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm-3) to 5×10 (cm-3) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-vg curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the vo-vi characteristics and analyzes the parameters of the inverter (e.g. VOh, VOl, Vih, Vil, VS), and the noise margin (e.g. NML, NMH) will be calculated in order to determine the inverter's performance and quality.
{"title":"Double gate junctionless MOSFET simulation and comparison with analytical model","authors":"Guang-Ming Zhang, Yi Su, Hsin-Yi Hsin, Y. Tsai","doi":"10.1109/RSM.2013.6706578","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706578","url":null,"abstract":"This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm-3) to 5×10 (cm-3) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-vg curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the vo-vi characteristics and analyzes the parameters of the inverter (e.g. VOh, VOl, Vih, Vil, VS), and the noise margin (e.g. NML, NMH) will be calculated in order to determine the inverter's performance and quality.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121822394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706520
T. Y. Chin, Z. Sauli, V. Retnasamy, N. Ramli
Barium strontium titanate(BaxSr1-xTiO3), BST thin film was a ferroelectric material used commercially in worldwide since decades ago. Many researches were done on this BST thin film. In this work, the experiment is focus on the dielectric properties of Ba0.7Sr0.3TiO3 thin film with different deposition layer. As the deposition layer of Ba0.7Sr0.3TiO3 increase, the dielectric properties of the thin film increase.
{"title":"Ba0.7 Sr0.3 TiO3 thin film dielectric properties with different deposition layer","authors":"T. Y. Chin, Z. Sauli, V. Retnasamy, N. Ramli","doi":"10.1109/RSM.2013.6706520","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706520","url":null,"abstract":"Barium strontium titanate(Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub>), BST thin film was a ferroelectric material used commercially in worldwide since decades ago. Many researches were done on this BST thin film. In this work, the experiment is focus on the dielectric properties of Ba<sub>0.7</sub>Sr<sub>0.3</sub>TiO<sub>3</sub> thin film with different deposition layer. As the deposition layer of Ba<sub>0.7</sub>Sr<sub>0.3</sub>TiO<sub>3</sub> increase, the dielectric properties of the thin film increase.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126025934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706475
A. Mirza, N. H. Hamid, M. Khir, J. Dennis, K. Ashraf, M. T. Jan, M. Shoaib
Capnometers measure the concentration of CO2 in exhaled breath which could prevent serious problems in all areas of healthcare, from pre-hospital to extended care, and everywhere in between. Presently, high cost, big size and high power usage limit the scope of the conventional capnometers and their adaption. To overcome these issues, a CMOS MEMS micro-cantilever has been proposed for capnometric applications. Analytical modeling and simulation of the microcantilever sensor is carried out to determine its resonance frequency and sensitivity. According to the developed analytical model and simulation results, the sensor has 1% difference in the resonance frequency. The sensitivity of the sensor is determined analytically at different thicknesses of the polymer coating layer. The sensitivity of the sensor is 3.18 Hz/100ppm at 5 μm polymer layer thickness.
{"title":"Analytical modeling and simulation of a CMOS-MEMS cantilever based CO2 sensor for medical applications","authors":"A. Mirza, N. H. Hamid, M. Khir, J. Dennis, K. Ashraf, M. T. Jan, M. Shoaib","doi":"10.1109/RSM.2013.6706475","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706475","url":null,"abstract":"Capnometers measure the concentration of CO2 in exhaled breath which could prevent serious problems in all areas of healthcare, from pre-hospital to extended care, and everywhere in between. Presently, high cost, big size and high power usage limit the scope of the conventional capnometers and their adaption. To overcome these issues, a CMOS MEMS micro-cantilever has been proposed for capnometric applications. Analytical modeling and simulation of the microcantilever sensor is carried out to determine its resonance frequency and sensitivity. According to the developed analytical model and simulation results, the sensor has 1% difference in the resonance frequency. The sensitivity of the sensor is determined analytically at different thicknesses of the polymer coating layer. The sensitivity of the sensor is 3.18 Hz/100ppm at 5 μm polymer layer thickness.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125557952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706574
Ahmed M. M. Almassri, W. Hasan, S. A. Ahmad, A. J. Ishak
In this paper, we have studied and surveyed the field of robotic hand and the works that have been done in this area related to types of materials such as piezoresistive, piezoelectric and capacitive as well as a few types of pressure sensors. It indicates that piezoresistive pressure sensor is the best technique that can be used to implement a robotic hand for pick and place application. An adequate experiment of pressure sensor interfacing and calibration have been done in this paper. As a preliminary result of the works, output voltage (V) of the pressure sensor versus applied force input (N) are presented. Furthermore, this framework can be used to derive a new approach of pressure sensor distribution on the robotic hand based on complex algorithm of controlling applied pressures.
{"title":"A sensitivity study of piezoresistive pressure sensor for robotic hand","authors":"Ahmed M. M. Almassri, W. Hasan, S. A. Ahmad, A. J. Ishak","doi":"10.1109/RSM.2013.6706574","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706574","url":null,"abstract":"In this paper, we have studied and surveyed the field of robotic hand and the works that have been done in this area related to types of materials such as piezoresistive, piezoelectric and capacitive as well as a few types of pressure sensors. It indicates that piezoresistive pressure sensor is the best technique that can be used to implement a robotic hand for pick and place application. An adequate experiment of pressure sensor interfacing and calibration have been done in this paper. As a preliminary result of the works, output voltage (V) of the pressure sensor versus applied force input (N) are presented. Furthermore, this framework can be used to derive a new approach of pressure sensor distribution on the robotic hand based on complex algorithm of controlling applied pressures.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122601466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706525
M. K. Ahmad, Murakami Kenji
Titanium Dioxide (TiO2) optoelectronic devices and a potential material for the future solar cell applications. In this study, the combination of anatase-phased TiO2 layer and rutile-phased TiO2 nanorods and nanoflowers film will be studied. Anatase-phased TiO2 layer was deposited using Spray Pyrolysis Deposition method and rutile-phased TiO2 nanorods and nanoflowers film were prepared by hydrothermal method using steel made autoclave. Crystalline structures, morphology characteristics of combinated films were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and power conversion efficiency.
{"title":"Effect of anatase TiO2 overlayer on the photovoltaic properties of rutile phase nanostructured dye-sensitized solar cell","authors":"M. K. Ahmad, Murakami Kenji","doi":"10.1109/RSM.2013.6706525","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706525","url":null,"abstract":"Titanium Dioxide (TiO2) optoelectronic devices and a potential material for the future solar cell applications. In this study, the combination of anatase-phased TiO2 layer and rutile-phased TiO2 nanorods and nanoflowers film will be studied. Anatase-phased TiO2 layer was deposited using Spray Pyrolysis Deposition method and rutile-phased TiO2 nanorods and nanoflowers film were prepared by hydrothermal method using steel made autoclave. Crystalline structures, morphology characteristics of combinated films were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and power conversion efficiency.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123033868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706573
M. R. Wee, M. R. Buyong, B. Majlis
Microfluidic has become an important component in “lab on chip” device. This portable device has a lot of potential in medical diagnostic to inform the result spontaneously to the patient with only a small volume of sample and reagent. The device's fabrication using Polydimethylsiloxane has become conventional materials which use soft lithography technique developed by Whitesides. However, the inconvenience from this method is the channel fabricated will have a rectangular cross section. From macroscale perspectives, we suggest that circular shape is the best choice to obtain a better performance from the device even though the fabrication of circular microchannel is still a huge obstacle to be figured out. In this paper, we present a fluid flow simulation using finite element COMSOL module microfluidic for circular and rectangular microchannel. Through this simulation, we can see the impact of microchannel shape through the difference in pressure along with velocity and shear rate. From the simulation, the data provided show that a circular channel reduce almost 10 % of the pressure applied to flow the fluid but also 50% of the shear rate. The future work of this study is to fabricate a simple and low cost round microchannel and integrate it in the next lab on chip device.
{"title":"Effect of microchannel geometry in fluid flow for PDMS based device","authors":"M. R. Wee, M. R. Buyong, B. Majlis","doi":"10.1109/RSM.2013.6706573","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706573","url":null,"abstract":"Microfluidic has become an important component in “lab on chip” device. This portable device has a lot of potential in medical diagnostic to inform the result spontaneously to the patient with only a small volume of sample and reagent. The device's fabrication using Polydimethylsiloxane has become conventional materials which use soft lithography technique developed by Whitesides. However, the inconvenience from this method is the channel fabricated will have a rectangular cross section. From macroscale perspectives, we suggest that circular shape is the best choice to obtain a better performance from the device even though the fabrication of circular microchannel is still a huge obstacle to be figured out. In this paper, we present a fluid flow simulation using finite element COMSOL module microfluidic for circular and rectangular microchannel. Through this simulation, we can see the impact of microchannel shape through the difference in pressure along with velocity and shear rate. From the simulation, the data provided show that a circular channel reduce almost 10 % of the pressure applied to flow the fluid but also 50% of the shear rate. The future work of this study is to fabricate a simple and low cost round microchannel and integrate it in the next lab on chip device.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114561609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706518
A. T. Z. Yeow, V. Retnasamy, Z. Sauli, G. S. Chui
This paper studies the factors that affect the wettability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are 18.5, -2.5, and -10.5 respectively. It can be concluded that for Platinum deposited wafer etched using SF6+Argon gaseous, the most significant factor is ICP power. Moreover, the contact angle is inversly proportional to the bias power and working pressure although the slope for working pressure is steeper than that of bias power. Lastly, all the experiments produced the contact angle greater than 90° and are categorized as hydrophobic.
{"title":"Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+Argon gaseous","authors":"A. T. Z. Yeow, V. Retnasamy, Z. Sauli, G. S. Chui","doi":"10.1109/RSM.2013.6706518","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706518","url":null,"abstract":"This paper studies the factors that affect the wettability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are 18.5, -2.5, and -10.5 respectively. It can be concluded that for Platinum deposited wafer etched using SF6+Argon gaseous, the most significant factor is ICP power. Moreover, the contact angle is inversly proportional to the bias power and working pressure although the slope for working pressure is steeper than that of bias power. Lastly, all the experiments produced the contact angle greater than 90° and are categorized as hydrophobic.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706493
Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly
We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.
{"title":"Calibration of the density-gradient TCAD model for germanium FinFETs","authors":"Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly","doi":"10.1109/RSM.2013.6706493","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706493","url":null,"abstract":"We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128324826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706503
A. Alias, K. A. Mohamad, K. Uesugi, H. Fukuda
Oxide materials have been widely used in opto-electro devices due to their wide bandgap energy, high optical transparency in the visible light region, and wide range resistance. Recently, delafossite CuMO2 (M=Al, Ga, In) have been widely studied for p-type oxide semiconductors. In this study, CuGaO2 was chosen due to its smaller lattice mismatch with ZnO compared with CuAlO2 for the possibility of p-n junction device in the future work. Zn as impurity atoms was introduced to fabricate quaternary CuZnGaO2 films to reduce lattice mismatch with ZnO. In order to study the effect of the substitute site of the Zn ion for generating donor or acceptor, 3 methods of preparation of the Cu-Zn-Ga-O sol solution were also demonstrated. In this paper, the electrical and structural properties of Zn doped on the sol-gel derived CuGaO2 films have been investigated. The diffraction angle of the CuGaO2 films are shifted to lower angle with increasing Zn%, indicating the lattice expansion which proved that the introducing Zn as impurity atoms was able to reduce lattice mismatch between CuGaO2 and ZnO. While the curve in the negative gate bias Vg proved the hole dominated transport properties. The curve in the positive gate bias can be suppressed by introducing Zn.
{"title":"Electrical and structural characterization of Zn doped CuGaO2 films","authors":"A. Alias, K. A. Mohamad, K. Uesugi, H. Fukuda","doi":"10.1109/RSM.2013.6706503","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706503","url":null,"abstract":"Oxide materials have been widely used in opto-electro devices due to their wide bandgap energy, high optical transparency in the visible light region, and wide range resistance. Recently, delafossite CuMO2 (M=Al, Ga, In) have been widely studied for p-type oxide semiconductors. In this study, CuGaO2 was chosen due to its smaller lattice mismatch with ZnO compared with CuAlO2 for the possibility of p-n junction device in the future work. Zn as impurity atoms was introduced to fabricate quaternary CuZnGaO2 films to reduce lattice mismatch with ZnO. In order to study the effect of the substitute site of the Zn ion for generating donor or acceptor, 3 methods of preparation of the Cu-Zn-Ga-O sol solution were also demonstrated. In this paper, the electrical and structural properties of Zn doped on the sol-gel derived CuGaO2 films have been investigated. The diffraction angle of the CuGaO2 films are shifted to lower angle with increasing Zn%, indicating the lattice expansion which proved that the introducing Zn as impurity atoms was able to reduce lattice mismatch between CuGaO2 and ZnO. While the curve in the negative gate bias Vg proved the hole dominated transport properties. The curve in the positive gate bias can be suppressed by introducing Zn.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123189384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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