Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, G. Du
{"title":"Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM","authors":"Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, G. Du","doi":"10.1109/IPFA.2018.8452601","DOIUrl":null,"url":null,"abstract":"In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.
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