Controller Design of a New Universal Two-Phase SiC-GaN-Based DC-DC Converter for Plug-in Electric Vehicles

Milad Moradpour, G. Gatto
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引用次数: 3

Abstract

Wide Band Gap (WBG) semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are being replaced with Silicon (Si) MOSFETs and IGBTs in power switching converters. In hard-switching applications, GaN is more attractive because of its lower switching power losses. The DC-DC power module of the motor drive in Plug-In Electric Vehicles (PEVs) has a power rating range of 30–150 kW while the power rating of GaN is not that much high. A two-phase SiC-GaN-based converter can satisfy the demanded power, achieving the advantage of WBG technology, and avoid the complexity of multi-phase converter with high number of phases. Obtaining the maximum efficiency, the power sharing is not symmetrical. Therefore, a cascade controller is considered in this paper to control fully directional universal converter: drive/plug-in, boost/buck mode. The simulation results prove the satisfactory performance of the controller in all modes of operation.
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插电式电动汽车用新型通用两相sic - gan DC-DC变换器控制器设计
在功率开关变换器中,诸如碳化硅(SiC)和氮化镓(GaN)等宽带隙(WBG)半导体技术正在被硅(Si) mosfet和igbt取代。在硬开关应用中,氮化镓因其较低的开关功率损耗而更具吸引力。插电式电动汽车(pev)中电机驱动器的DC-DC电源模块的额定功率范围为30 - 150kw,而GaN的额定功率并没有那么高。基于sic - gan的两相变换器可以满足所需功率,实现WBG技术的优势,避免了高相数多相变换器的复杂性。为了获得最大的效率,功率共享是不对称的。因此,本文考虑采用级联控制器来控制全向通用变换器:驱动/插件、升压/降压模式。仿真结果证明了该控制器在各种工作模式下的良好性能。
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