{"title":"Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy","authors":"A. Dallmann","doi":"10.1109/IRPS.1986.362116","DOIUrl":null,"url":null,"abstract":"With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1986.362116","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
