THE INVESTIGATION OF THE INFLUENCE`S MECHANISM OF THE CONCENTRATION OF CHARGE CARRIERS ON THE MECHANICAL STRENGTH OF SILICON WAFERS WITH HOLE CONDUCTIVITY
{"title":"THE INVESTIGATION OF THE INFLUENCE`S MECHANISM OF THE CONCENTRATION OF CHARGE CARRIERS ON THE MECHANICAL STRENGTH OF SILICON WAFERS WITH HOLE CONDUCTIVITY","authors":"O. G. Kazakov, A. V. Rad’kov, N.O. Rad'kova","doi":"10.31145/1999-513x-2022-1-68-72","DOIUrl":null,"url":null,"abstract":"The article discusses the mechanism of the influence of the concentration of charge carriers on the mechanical strength of silicon wafers under mechanical action. The effect of the hole concentration on the length of a micro crack and the mechanical strength of silicon wafers is considered. Structural defects (holes) are shifted to the region of higher mechanical stresses under mechanical action.","PeriodicalId":196813,"journal":{"name":"Quality. Innovation. Education","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quality. Innovation. Education","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31145/1999-513x-2022-1-68-72","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The article discusses the mechanism of the influence of the concentration of charge carriers on the mechanical strength of silicon wafers under mechanical action. The effect of the hole concentration on the length of a micro crack and the mechanical strength of silicon wafers is considered. Structural defects (holes) are shifted to the region of higher mechanical stresses under mechanical action.
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