{"title":"Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS)","authors":"N. Tega, K. Tani, D. Hisamoto, A. Shima","doi":"10.1109/ISPSD.2018.8393697","DOIUrl":null,"url":null,"abstract":"A 3.3-kV SiC trench-etched double-diffused MOS (TED MOS) is designed and fabricated for robust short-circuit (SC) capability. Because of its low-Vover (Vg — Vth) operation, the TED MOS successfully reduces the drain current in saturation region to less than 700 A/cm2 at SC tests. The low drain current in a saturation region enhances the SC capability of the TED MOS. As a result, the SC endurance time of the TED MOS is 2.8 times longer than that of the conventional SiC DMOS.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A 3.3-kV SiC trench-etched double-diffused MOS (TED MOS) is designed and fabricated for robust short-circuit (SC) capability. Because of its low-Vover (Vg — Vth) operation, the TED MOS successfully reduces the drain current in saturation region to less than 700 A/cm2 at SC tests. The low drain current in a saturation region enhances the SC capability of the TED MOS. As a result, the SC endurance time of the TED MOS is 2.8 times longer than that of the conventional SiC DMOS.
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