Comparison between MOS and bipolar mm-wave power amplifiers in advanced SiGe technologies

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI:10.1109/BCTM.2014.6981305

A. Serhan, E. Lauga-Larroze, S. Bourdel, J. Fournier, N. Corrao

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引用次数: 4

Abstract

This article provides a comparison between the performance of MOS and bipolar single stage power amplifiers (PA) in silicon germanium SiGe BiCMOS 55 nm technology from STMicroelectronics. The comparison is made in the same technology node and under similar design conditions (bias current, supply voltage, class of operation and silicon area). Moreover, slow wave coplanar waveguides (S-CPW) were used for matching network in order to reduce the impact of the passive components on the overall performances. Measurement results prove the superiority of bipolar PA in terms of power gain (8.2 dB against 5.5 dB for MOS), and power added efficiency (PAE) (16 % against 12 % for MOS). The output compression point (OCP1db) and saturation power (Psat) (7 dBm and 10 dBm respectively) are similar for both amplifiers. These results are clarified through a brief theoretical study. To our best knowledge, the presented bipolar PA has the highest figure of merit (FOM) when compared to the state of art of single stage, common source, class-A, 60 GHz power amplifiers.

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先进SiGe技术中MOS与双极毫米波功率放大器的比较

本文比较了意法半导体(STMicroelectronics) 55nm硅锗SiGe BiCMOS工艺的MOS和双极单级功率放大器(PA)的性能。在相同的技术节点和相似的设计条件下(偏置电流、电源电压、工作等级和硅面积)进行比较。此外，采用慢波共面波导(S-CPW)进行匹配网络，以减少无源器件对整体性能的影响。测量结果证明了双极放大器在功率增益(8.2 dB比5.5 dB)和功率附加效率(PAE)(16%比12%)方面的优势。两种放大器的输出压缩点(OCP1db)和饱和功率(Psat)(分别为7 dBm和10 dBm)相似。通过简要的理论研究，对这些结果进行了澄清。据我们所知，与目前最先进的单级、共源、a类、60 GHz功率放大器相比，本设计的双极放大器具有最高的性能值(FOM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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