Z. Chen, Z. Liu, W. Ma, Y. Shen, H. Zhang, T. P. Chen
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引用次数: 1
Abstract
In this work, memory devices with Ag/a-IGZO/ITO structures were fabricated mainly based on solution-based synthesis approaches. Specifically, the IGZO thin film was prepared by spin coating of IGZO ink and the top Ag electrodes were formed by ink-jet printing. Electrical measurements showed that Roff/Ron ratio was over two orders and the device resistance and could be maintained up to 105s without degradation.
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