Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)

2013 IEEE International Conference of IEEE Region 10 (TENCON 2013) Pub Date : 2013-10-01 DOI:10.1109/TENCON.2013.6718843

I. Saad, H. M. Zuhir, C. B. Seng, A. R. A. Bakar, N. Bolong, A. M. Khairul, B. Ghosh, R. Ismail

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Abstract

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The electron mobility in the VESIMOS-DP (~1440m2/V-s), was found to be increased by 4% in comparison to VESIMOS (~1386 m2/V-s) device. The mobilities in strained layer is depends on the transport direction, either parallel to the original SiGe growth interface or in the perpendicular direction. Carrier mobilities in strained SiGe layer is also based on the local distortion due to the strain effects which contribute to the alloy scattering on the carriers. With the vicinity of DP, the carrier scattering effect has reduced which merits the introduction of DP on the device. Due to the DP layer, improve stability of threshold voltage, VTH and subthreshold slope, S was found for VESIMOS-DP device of various size ranging from 20nm to 80nm justified the vicinity of the DP on improving the performance of the device.

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介电袋(VESIMOS-DP)增强垂直应变-冲击电离MOSFET的迁移率

本文成功研制了具有介电袋的垂直应变硅锗冲击电离MOSFET (VESIMOS-DP)。VESIMOS- dp (~1440m2/V-s)的电子迁移率比VESIMOS (~1386 m2/V-s)器件提高了4%。应变层中的迁移率取决于输运方向，可以平行于原始SiGe生长界面，也可以垂直于原始SiGe生长界面。应变SiGe层中的载流子迁移率也是基于应变效应引起的局部畸变，这种畸变会导致合金在载流子上的散射。在DP附近，载流子散射效应减小，因此在器件上引入DP是值得的。由于DP层的存在，提高了阈值电压、VTH和亚阈值斜率的稳定性，在20nm至80nm的各种尺寸VESIMOS-DP器件中发现S证明了DP附近对器件性能的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)

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