{"title":"A Wide-band CMOS Low-Noise Amplifier for TV Tuner Applications","authors":"Youchun Liao, Zhangwen Tang, Hao Min","doi":"10.1109/ASSCC.2006.357900","DOIUrl":null,"url":null,"abstract":"In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"622 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.