A Wide-band CMOS Low-Noise Amplifier for TV Tuner Applications

Youchun Liao, Zhangwen Tang, Hao Min
{"title":"A Wide-band CMOS Low-Noise Amplifier for TV Tuner Applications","authors":"Youchun Liao, Zhangwen Tang, Hao Min","doi":"10.1109/ASSCC.2006.357900","DOIUrl":null,"url":null,"abstract":"In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"622 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于电视调谐器的宽带CMOS低噪声放大器
本文设计了一种宽带CMOS低噪声放大器(LNA),该放大器利用消噪技术消除了输入MOSFET的热噪声。在输入/输出阻抗匹配条件下设计LNA。并对其噪声系数(NF)和线性度分析进行了详细的研究。LNA芯片采用0.25 μ m 1P5M RF CMOS工艺实现。测量结果表明,在50 ~ 860mhz频段,增益约为13.4 dB, NF范围为2.4 ~ 3.5 dB,输入参考三阶截距(IIP3)为3.3 dBm。该芯片在2.5 v电源下功耗为30mw,核心尺寸仅为0.15 mm × 0.18 mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
ESD Protection Design by Using Only 1×VDD Low-Voltage Devices for Mixed-Voltage I/O Buffers with 3×VDD Input Tolerance A Digitally Calibrated Current-Voltage Feedback Transconductor in 0.13-μm CMOS Process A Wide-Range Burst Mode Clock and Data Recovery Circuit A 2.4-GHz CMOS Driver Amplifier Based on Multiple-Gated Transistor and Resistive Source Degeneration for Mobile WiMAX Design of a Dual-Mode NoC Router Integrated with Network Interface for AMBA-based IPs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1