D. Shahrjerdi, B. Hekmatshoar, S. Mohajerzadeh, S. Darbari
{"title":"Low temperature fabrication of high mobility poly-Ge TFTs on plastic","authors":"D. Shahrjerdi, B. Hekmatshoar, S. Mohajerzadeh, S. Darbari","doi":"10.1109/ICM.2003.237966","DOIUrl":null,"url":null,"abstract":"Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm/sup 2//V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4/spl times/l0/sup 4/. All of the fabrication steps have been done at temperatures as low as 130/spl deg/C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.","PeriodicalId":180690,"journal":{"name":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2003.237966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm/sup 2//V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4/spl times/l0/sup 4/. All of the fabrication steps have been done at temperatures as low as 130/spl deg/C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.