A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

Woonghee Lee, N. Akahane, S. Adachi, K. Mizobuchi, S. Sugawa
{"title":"A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation","authors":"Woonghee Lee, N. Akahane, S. Adachi, K. Mizobuchi, S. Sugawa","doi":"10.1109/ASSCC.2007.4425780","DOIUrl":null,"url":null,"abstract":"We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 mum times 5.6 mum pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 mum 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 muV/e-, a low input-referred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 times 105 e-.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2007.4425780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 mum times 5.6 mum pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 mum 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 muV/e-, a low input-referred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 times 105 e-.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有主动像素读出反馈操作的高信噪比和高满井容量CMOS图像传感器
讨论了高信噪比、宽动态范围CMOS图像传感器的设计和工作结果。通过主动采用像素源从动器反馈操作,提高了图像传感器的读出增益和输入参考噪声。1/4英寸5.6 μ m × 5.6 μ m像素VGA彩色CMOS图像传感器在0.18 μ m 2P3M CMOS工艺中具有横向溢出集成电容,与不积极使用反馈操作的情况相比,其增益约为1.7倍,从而获得超过200 μ v /e-的高输入参考转换增益,低于2 μ v /e-的低输入参考噪声,以及约1.3倍105 μ e-的高满阱容量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Field-programmable VLSI based on an asynchronous bit-serial architecture MuCCRA chips: Configurable dynamically-reconfigurable processors Interference from power/signal lines and to SRAM circuits in 65nm CMOS inductive-coupling link 40 frames/sec 16×16 temperature probe array using 90nm 1V CMOS for on-line thermal monitoring on VLSI chip A 3.125 Gbps CMOS fully integrated optical receiver with adaptive analog equalizer
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1